| åå· | åå | æ¹å· | å°è£ | 说æ |
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BZV55-B5V1,115
| NXP | 10+ | | Voltage regulator diodes |
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BZX79-C5V1,133
| NXP | 10+ | SOD27 | Voltage regulator diodes |
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BAS35,215
| NXP | 10+ | SOT23 | NPN General Purpose Silicon Transistor(NPNéç¨æ¶ä½ç®¡ |
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BCX70K,215
| NXP | 10+ | | NPN General Purpose Silicon Transistor(NPNéç¨æ¶ä½ç®¡) |
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BAT54,215
| NXP | 10+ | SOT23-3 | Schottky Barrier Diode(èç¹åºå¿åäºæ管) |
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1N4148,113
| NXP | 10+ | DO35 | Silicon Epitaxial Planar Diodes |
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BAV23,215
| NXP | 10+ | Tape | General Purpose Double Diode(åéç¨äºæ管) |
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BC847BS,115
| NXP | 10+ | SOT-23 | NPN general purpose double transistor(NPNéç¨ååæ¶ä½ç®¡) |
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BZV55-C8V2,115
| NXP | 10+ | PBFREE | Voltage regulator diodes |
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PMBD7000,215
| NXP | 10+ | PBFREE | High-Speed Double Diode(åé«éäºæ管 |
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PMBT2222A,215
| NXP | 10+ | 11+ | NPN switching transistors |
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BAS70,215
| NXP | 10+ | Tape | Schottky Barrier (Double) Diodes(èç¹åºå¿åï¼åï¼äºæ管) |
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BAS21,215
| NXP | 10+ | SOT-23 | General purpose diodes(éç¨äºæ管) |
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BC847B,215
| NXP | 10+ | SOT-223 | NPN General Purpose Transistor |
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BAS316,115
| NXP | 10+ | Tape | High-speed diodes( é«éäºæ管) |
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BC857B,215
| NXP | 10+ | Tape | PNP General Purpose Transistor(PNPéç¨æ¶ä½ç®¡) |
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BC817-40,215
| NXP | 10+ | SOT23 | NPN General Purpose Amplifier(NPNéç¨æ¾å¤§å¨) |
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PH4830L,115
| NXP | 10+ | Standardpac | N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 84 A; Qgd (typ): 5.4 nC; RDS(on):[email protected]V 4.8@10 V mOhm; VDSmax: 30 V |
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BC869,115
| NXP | 10+ | SOT89 | PNP medium power transistor(PNPä¸çåçæ¶ä½ç®¡) |
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BAV99S,115
| NXP | 10+ | Tape | High Speed Switching Diodes; Package: PG-SOT363-6; Configuration: Quadruple; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 150.0 nA; trr (max): 4.0 |