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BC847BS,115
| NXP | 10+ | SOT-23 | NPN general purpose double transistor(NPNéç¨ååæ¶ä½ç®¡) |
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BZV55-C8V2,115
| NXP | 10+ | PBFREE | Voltage regulator diodes |
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PMBD7000,215
| NXP | 10+ | PBFREE | High-Speed Double Diode(åé«éäºæ管 |
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PMBT2222A,215
| NXP | 10+ | 11+ | NPN switching transistors |
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BAS70,215
| NXP | 10+ | Tape | Schottky Barrier (Double) Diodes(èç¹åºå¿åï¼åï¼äºæ管) |
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BAS21,215
| NXP | 10+ | SOT-23 | General purpose diodes(éç¨äºæ管) |
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BC847B,215
| NXP | 10+ | SOT-223 | NPN General Purpose Transistor |
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BAS316,115
| NXP | 10+ | Tape | High-speed diodes( é«éäºæ管) |
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BC857B,215
| NXP | 10+ | Tape | PNP General Purpose Transistor(PNPéç¨æ¶ä½ç®¡) |
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BC817-40,215
| NXP | 10+ | SOT23 | NPN General Purpose Amplifier(NPNéç¨æ¾å¤§å¨) |
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PH4830L,115
| NXP | 10+ | Standardpac | N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 84 A; Qgd (typ): 5.4 nC; RDS(on):[email protected]V 4.8@10 V mOhm; VDSmax: 30 V |
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BC869,115
| NXP | 10+ | SOT89 | PNP medium power transistor(PNPä¸çåçæ¶ä½ç®¡) |
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BAV99S,115
| NXP | 10+ | Tape | High Speed Switching Diodes; Package: PG-SOT363-6; Configuration: Quadruple; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 150.0 nA; trr (max): 4.0 |
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BAS16,215
| NXP | 10+ | SOT23-3 | High-speed diodes( é«éäºæ管) |
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PMEG4020EP,115
| NXP | 10+ | PBFREE | 2 A low Vf MEGA Schottky barrier rectifier, SOD128 (FlatPower), Reel Pack, SMD |
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BC847C,215
| NXP | 10+ | Tape | NPN General Purpose Transistor |
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SA58631
| NXP | 10+ | HVQFN8 | SA58631 Series 6 db - 30 db Gain 3 W BTL Audio Amplifier - HVSON - 8 |
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ASC8850
| NXP | 10+ | å¼åæ¿ | asc8850 é«æ¸
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PESD3V3L5UY
| NXP | 11+ | SOT363 | |
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HEF4073BP
| NXP | 09+ | DIP | é»è¾è¯çï¼3线è¾å
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