| åå· | åå | æ¹å· | å°è£ | 说æ |
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PH3330L
| NXP | 10+ | SOT669 | æ²éåºæåºæ¶ä½ç®¡é»è¾çµå¹³TrenchMOS |
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PSMN059-150Y
| NXP | 10+ | SOT669 | æ²éåºæåºæ¶ä½ç®¡é»è¾çµå¹³TrenchMOS |
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PH20100S
| NXP | 10+ | SOT669 | æ²éåºæåºæ¶ä½ç®¡é»è¾çµå¹³TrenchMOS |
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PH2525L
| NXP | 10+ | SOT669 | æ²éåºæåºæ¶ä½ç®¡é»è¾çµå¹³TrenchMOS |
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PH4025L
| NXP | 10+ | SOT669 | æ²éåºæåºæ¶ä½ç®¡é»è¾çµå¹³TrenchMOS |
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PH5525L
| NXP | 10+ | SOT669 | æ²éåºæåºæ¶ä½ç®¡é»è¾çµå¹³TrenchMOS |
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PH6325L
| NXP | 10+ | SOT-669 | Næ²éåºæåºæ¶ä½ç®¡é»è¾çµå¹³TrenchMOS |
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PH955L
| NXP | 09+ | SOT669 | æ²éåºæåºæ¶ä½ç®¡é»è¾çµå¹³TrenchMOS |
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PH9025L
| NXP | 0927+ | SOT-669 | N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 66 A; Qgd (typ): 2.7 nC; RDS(on):[email protected]V 9@10 V mOhm; VDSmax: 25.0 V; |
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PMV65XP
| NXP | 11+ | SOT-23-3 | Pæ²éTrenchMOSåºæåºç®¡ P-channel TrenchMOS(tm) extremely low level FET - Configuration: Single P-channel ; ID DC: 3.9 A; Qgd (typ): 0.65 nC; RDS(on):[email protected] |
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2N7002E
| NXP | 11+ | SOT-23 | Næ²éå¢å¼ºååºæåºæ¶ä½ç®¡N-channel TrenchMOS FET - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 4400 @[email protected]mOhm; VDSmax: 60 V |
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2N7002K
| NXP | 11+ | SOT-23 | Næ²éå¢å¼ºååºæåºæ¶ä½ç®¡N-channel TrenchMOS FET - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 4400 @[email protected]mOhm; VDSmax: 60 V |
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BSN20
| NXP | 11+ | SOT-23 | Næ²éå¢å¼ºååºæåºæ¶ä½ç®¡ N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 0.173 A; RDS(on): 15000@10V20000@5V mOhm; |
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PMBF170
| NXP | 11+ | SOT-23 | Næ²éå¢å¼ºååºæåºæ¶ä½ç®¡ Standalone 750mA Li-Ion Battery Charger in 2 x 2 DFN; Package: DFN; No of Pins: 6; Temperature Range: -40°C to +125°C |
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PMN50XP
| NXP | 10+PB | SOT23-6 | Pæ²éTrenchMOSé常ä½çæ°´å¹³åºæåºç®¡ |
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BC847C
| NXP | 10+ | SOT-23 | äºæ管 |
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SI2304DS
| NXP | 11+ | SOT23-3 | Næ²éå¢å¼ºååºæåºæ¶ä½ç®¡N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 1.7 A; Qgd (typ): 1.35 nC; RDS(on): 117@10V1 |
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PMV117EN
| NXP | 11+ | SOT23-3 | 30 V uTrenchMOSå¢å¼ºåºæåºæ¶ä½ç®¡é»è¾çµå¹³ micro TrenchMOS(tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 2.5 A; Qgd (typ): 1.35 nC; RDS( |
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BSH108
| NXP | 11+ | SOT23-3 | 30 V Næ²éå¢å¼ºååºæåºæ¶ä½ç®¡N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 1.9 A; Qgd (typ): 1.3 nC; RDS(on): 1 |
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BSH114
| NXP | 11+ | SOT23-3 | Næ²éå¢å¼ºååºæåºæ¶ä½ç®¡N-channel enhancement mode field effect transistor - Configuration: Single N-channel ; ID DC: 0.85 A; Qgd (typ): 2.1 nC; RDS(on): 500@10V |