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IRFR014
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IRFR014

  • 所属类别：场效应管
  • 产品名称：N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
  • 厂商：IR
  • 生产批号：10+
  • 封装：TO-252
  • 库存状态：有库存
  • 库存量：9000
  • 最低订购量：1
  • 详细资料：点击查找IRFR014çš„pdf资料
  • 点击询价
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  • 产品介绍

IRFR014N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)

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IRFR014TRPBF IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TRLPBF IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TRL IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TR IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014PBF IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
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IRFR024TRR IR10+SOT252Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A)
IRFR024TRPBF IR10+SOT252Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A)

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