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IPD16CNE8N
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IPD16CNE8N

  • 所属类别：场效应管
  • 产品名称：功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 85.0 V; RDS (on) (max) (@10V): 16.0 mOhm; RDS (on) (max)
  • 厂商：INFINEON
  • 生产批号：2010+
  • 封装：SOT-252
  • 库存状态：有库存
  • 库存量：16000
  • 最低订购量：1
  • 详细资料：点击查找IPD16CNE8Nçš„pdf资料
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  • 产品介绍

IPD16CNE8N       功率晶体管N-Channel MOSFETs (20V… 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 85.0 V; RDS (on) (max) (@10V): 16.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 53.0 A;

与IPD16CNE8N相关的IC还有：


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IPD49CN10N INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 49.0 mOhm; RDS (on) (max)
IPD33CN10N INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 33.0 mOhm; RDS (on) (max)
IPD25CNE8N INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 25.0 mOhm; RDS (on) (max)
IPD25CN10N INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 25.0 mOhm; RDS (on) (max)
IPD20N03L INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 20.0 mOhm; RDS (on) (max)
IPD16CN10N INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 16.0 mOhm; RDS (on) (max)
IPD144N06NG INFINEON2010+SOT-252功率晶体管
IPD13N03LA INFINEON2010+SOT-252功率晶体管 Flat / Ribbon Cable; Number of Conductors:10; Pitch Spacing:0.05"; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Conductor Material:C
IPD135N03LG INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 13.5 mOhm; RDS (on) (max) (
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IPD16CN10N INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 16.0 mOhm; RDS (on) (max)
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IPD135N03LG INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 13.5 mOhm; RDS (on) (max) (
IPD12CNE8N INFINEON2010+TO252-3功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 85.0 V; RDS (on) (max) (@10V): 12.4 mOhm; RDS (on) (max) (
IPD12CN10N INFINEON2010+TO252-3功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.4 mOhm; RDS (on) (max)
IPD10N03LA INFINEON2010+TO252-3功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 10.4 mOhm; RDS (on) (max) (
IPD09N03LB INFINEON2010+TO252-3功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.1 mOhm; RDS (on) (max) ( @
IPD090N03LG INFINEON2010+TO-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RDS (on) (max) ( @
IPD06N03LB INFINEON2010+TO-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 6.1 mOhm; RDS (on) (max) ( @
IPD06N03LA INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( @
IPD060N03LG INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( @
IPD05N03LB INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( @
IPD05N03LA INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( @
IPD04N03LB INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD04N03LA INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD040N03LG INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD03N03LB INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD03N03LA INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPBH6N03LA INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) (

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