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IPB180N04S4-H0
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IPB180N04S4-H0

  • 所属类别：电源管理芯片
  • 产品名称：Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
  • 厂商：INFINEON
  • 生产批号：10+
  • 封装：PG-TO263-7-
  • 库存状态：有库存
  • 库存量：4500
  • 最低订购量：1
  • 详细资料：点击查找IPB180N04S4-H0çš„pdf资料
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  • 产品介绍

IPB180N04S4-H0 Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; RthJC (max): 0.8 K/W;

与IPB180N04S4-H0相关的IC还有：


型号厂商批号封è£è¯´æ˜Ž
IPB45N04S4L-08 INFINEON10+TO263-3-2OptiMOS㈢-T Power-Transistor
IPB25N06S3L-22 INFINEON10+TO263-3-2OptiMOS㈢-T Power-Transistor
IPB25N06S3-25 INFINEON10+TO-263OptiMOS㈢-T Power-Transistor
IPB22N03S4L-15 INFINEON10+TO-263Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N06S4-H1 INFINEON10+PG-TO263-7-Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N04S4-00 INFINEON10+TO-263Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N04S3-02 INFINEON10+TO-263Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N03S4L-H0 INFINEON10+PG-TO263-7-OptiMOS㈢ - T Power-Transistor
IPB180N03S4L-01 INFINEON10+PG-TO263-7-OptiMOS㈢ - T Power-Transistor
IPB160N04S4-H1 INFINEON10+PG-TO263-7-OptiMOS㈢ - T Power-Transistor

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