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BYV28-50
| NXP | 07+ | SOD-64 | è¶
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PSMN004-55W
| NXP | 10+ | TO-247 | Næ²éæ¶ä½ç®¡TrenchMOS N-channel logic level TrenchMOS (tm) transistor - Configuration: Single N-channel ; ID DC: 100 A; Qgd (typ): 106 nC; RDS(on): 4.2 @ |
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PSMN005-75B
| NXP | 10+ | TO-263-3 | Næ²éæ¶ä½ç®¡TrenchMOS Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:10; Connector Shell Size:12; Connecting Termi |
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PSMN009-100W
| NXP | 10+ | TO-247 | Næ²éæ¶ä½ç®¡TrenchMOS Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:10; Connector Shell Size:12; Connecting Termi |
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PSMN035-150P
| NXP | 10+ | TO-220 | Næ²éæ¶ä½ç®¡TrenchMO N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 50 A; Qgd (typ): 33 nC; RDS(on): 35@10V |
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PSMN057-200B
| NXP | 10+ | TO-263 | Næ²éå¢å¼ºååºæåºæ¶ä½ç®¡N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel ; ID DC: 39 A; Qgd (typ): 37 nC; RDS(on): 57@10V mOhm; VDSmax: 200 V |
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PSMN057-200P
| NXP | 10+ | SOT78/TO-220 | Næ²éå¢å¼ºååºæåºæ¶ä½ç®¡N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel ; ID DC: 39 A; Qgd (typ): 37 nC; RDS(on): 57@10V mOhm; VDSmax: 200 V |
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PSMN063-150D
| NXP | 10+ | SOT-252 | Næ²éå¢å¼ºååºæåºæ¶ä½ç®¡Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:4; Connector Shell Siz |
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PSMN070-200B
| NXP | 10+ | TO-263 | Næ²éæ¶ä½ç®¡TrenchMOS Circular Connector; Body Material:Aluminum; Series:PT07; Number of Contacts:41; Connector Shell Size:20; Connecting Termination:Cri |
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PSMN070-200P
| NXP | 10+ | TO-220 | N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V |
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PSMN102-200Y
| NXP | 10+ | SOT-669 | N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V |
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PSMN130-200D
| NXP | 10+ | SOT-252 | N-channel TrenchMOS transistor(Næ²é TrenchMOSæ¶ä½ç®¡) |
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PSMN1R7-30YL
| NXP | 10+ | SOT-669 | N-æ²éåºæåºæ¶ä½ç®¡ N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2 @[email protected]mOhm; VDSmax: 3 |
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PH9930L
| NXP | 10+ | SOT-669 | N-æ²éåºæåºæ¶ä½ç®¡ N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2 @[email protected]mOhm; VDSmax: 3 |
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PH8230E
| NXP | 10+ | SOT-669 | N-æ²éåºæåºæ¶ä½ç®¡ N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2 @[email protected]mOhm; VDSmax: 3 |
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PH7030L
| NXP | 10+ | SOT-669 | æ²éåºæåºæ¶ä½ç®¡é»è¾çµå¹³Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on):[email protected]@4.5V mOhm; V |
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PSMN7R0-30YL
| NXP | 10+ | SOT-669 | æ²éåºæåºæ¶ä½ç®¡é»è¾çµå¹³Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on):[email protected]@4.5V mOhm; V |
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PH6030L
| NXP | 10+ | SOT-669 | æ²éåºæåºæ¶ä½ç®¡é»è¾çµå¹³Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on):[email protected]@4.5V mOhm; V |
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PSMN6R0-30YL
| NXP | 10+ | SOT-669 | æ²éåºæåºæ¶ä½ç®¡é»è¾çµå¹³Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on):[email protected]@4.5V mOhm; V |
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PH8030L
| NXP | 10+ | SOT669 | æ²éåºæåºæ¶ä½ç®¡é»è¾çµå¹³TrenchMOS |