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BSO080P03S
| INFINEON | 11+ | SOP-8 | Néé30.0 V åºæåºç®¡P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD |
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BSO080P03NS3
| INFINEON | 11+ | SOP-8 | Néé30.0 V åºæåºç®¡P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD |
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BSO080P03NS3E
| INFINEON | 11+ | SOP-8 | Néé30.0 V åºæåºç®¡P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD |
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BSC110N06NS3G
| INFINEON | 11+ | TDSON-8 | Néé60.0 V 50.0 Aåºæåºç®¡N-Channel MOSFETs (20Vâ¦250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 11.0 mOhm; RDS (o |
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BSC106N025SG
| INFINEON | 11+ | P-DSO-8 | Nééåºæåºç®¡OptiMOSã¢2 Power-Transistor |
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BSC100N06LS3G
| INFINEON | 11+ | TDSON-8 | Néé 60.0 V 50.0 Aåºæåºç®¡N-Channel MOSFETs (20Vâ¦250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS ( |
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BSC152N10NSFG
| INFINEON | 11+ | TDSON-8 | Néé 100.0 V 63.0 Aåºæåºç®¡N-Channel MOSFETs (20Vâ¦250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 15.2 mOhm; RDS |
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BSC085N025SG
| INFINEON | 11+ | TDSON-8 | Néé åºæåºç®¡OptiMOSã¢2 Power-Transistor |
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BSC076N06NS3G
| INFINEON | 11+ | TDSON-8 | Néé60.0 V 50.0 A åºæåºç®¡N-Channel MOSFETs (20Vâ¦250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 7.6 mOhm; RDS (o |
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BSC072N025SG
| INFINEON | 11+ | TDSON-8 | Néé åºæåºç®¡OptiMOSã¢2 Power-Transistor |
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BSC067N06LS3G
| INFINEON | 11+ | TDSON-8 | Néé åºæåºç®¡OptiMOSã¢2 Power-Transistor |
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BSC118N10NSG
| INFINEON | 11+ | P-DSO-8 | Néé åºæåºç®¡OptiMOSã¢2 Power-Transistor |
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BSC048N025SG
| INFINEON | 11+ | P-DSO-8 | Néé åºæåºç®¡OptiMOSã¢2 Power-Transistor |
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BSC037N025SG
| INFINEON | 11+ | P-DSO-8 | Néé åºæåºç®¡OptiMOSã¢2 Power-Transistor |
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BSC035N04LSG
| INFINEON | 11+ | SON-8 | Néé 40.0 V; 100.0 Aåºæåºç®¡N-Channel MOSFETs (20Vâ¦250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 3.5 mOhm; RDS ( |
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BSC028N06LS3G
| INFINEON | 11+ | SON-8 | Néé 60.0 V; 100.0 Aåºæåºç®¡N-Channel MOSFETs (20Vâ¦250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.8 mOhm; RDS ( |
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BSC027N04LSG
| INFINEON | 11+ | SON-8 | Néé 40.0 V 100.0 Aåºæåºç®¡N-Channel MOSFETs (20Vâ¦250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 2.7 mOhm; RDS (o |
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BSC024N025SG
| INFINEON | 11+ | SON-8 | Néé 40.0 V 100.0 Aåºæåºç®¡OptiMOSã¢2 Power-Transistor |
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BSC020N025SG
| INFINEON | 11+ | TDSON-8 | Néé 40.0 V 100.0 Aåºæåºç®¡OptiMOSã¢2 Power-Transistor |
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BSC019N04NSG
| INFINEON | 11+ | TDSON-8 | Néé 40.0 V 100.0 Aåºæåºç®¡N-Channel MOSFETs (20Vâ¦250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.9 mOhm; RDS (o |