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BSC079N03S
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BSC079N03S

  • 所属类别：场效应管
  • 产品名称：N沟道 30.0 V 40.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 7.9 mOhm; RD
  • 厂商：INFINEON
  • 生产批号：11+
  • 封装：SOP-8
  • 库存状态：有库存
  • 库存量：35000
  • 最低订购量：1
  • 详细资料：点击查找BSC079N03Sçš„pdf资料
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  • 产品介绍

BSC079N03S   N沟道   30.0 V  40.0 A场效应管N-Channel MOSFETs (20V… 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 7.9 mOhm; RDS (on) (max) (@4.5V): 11.6 mOhm; ID (max): 40.0 A;

与BSC079N03S相关的IC还有：


型号厂商批号封è£è¯´æ˜Ž
BSC050N03MSG INFINEON11+TDSON-8N通道 30.0 V 80.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.0 mOhm; RDS
BSC042N03LSG INFINEON11+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.5
BSC042N03MSG INFINEON11+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.5
BSC042N03SG INFINEON11+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.5
BSC032N03SG INFINEON11+TDSON-8N沟道 30.0 V 100.0 A; 场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.2 mOhm; R
BSC057N08NS3 INFINEON11+SON-8N沟道 80.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 5.7 mOhm; RDS
BSC100N03LS INFINEON11+P-TDSON-8N沟道 30.0 V 44.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS
BSC100N03MS INFINEON11+P-TDSON-8N沟道 30.0 V 44.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS
BSC047N08NS3 INFINEON11+TDSON-8N沟道 80.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 4.7 mOhm; RDS
BSC090N03MS INFINEON11+SON-8N沟道 30.0 V 48.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RDS

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BSC047N08NS3 INFINEON11+TDSON-8N沟道 80.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 4.7 mOhm; RDS
BSC090N03MS INFINEON11+SON-8N沟道 30.0 V 48.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RDS
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BSC100N03MSG INFINEON10+TDSON-8N通道 30.0 V 44.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm;

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